Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

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	Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy
	Yang XH
刊名	chinese physics letters
	2006
卷号	23 期号:4 页码:1005-1008
关键词	LASERS TEMPERATURE PHOTOLUMINESCENCE
ISSN号	0256-307x
通讯作者	niu, zc, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. e-mail: zcniu@red.semi.ac.cn
中文摘要	high (42.5%) indium content gainnas/gaas quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by radio frequency plasma nitrogen source assisted molecular beam epitaxy. the growth parameters of plasma power and n-2 how rate were optimized systematically to improve the material quality. photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m gainnas/gaas qws was kept as comparable as that in 1.31 mu m.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10708]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang XH. Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy[J]. chinese physics letters,2006,23(4):1005-1008.
APA	Yang XH.(2006).Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy.chinese physics letters,23(4),1005-1008.
MLA	Yang XH."Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy".chinese physics letters 23.4(2006):1005-1008.