The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content

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	The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content
	Wu DH ; Niu ZC ; Zhang SY ; Ni HQ ; He ZH ; Sun Z ; Han Q ; Wu RH
刊名	journal of crystal growth
	2006
卷号	290 期号:2 页码:494-497
关键词	photoluminescence molecular beam epitaxy quantum wells nitrides semiconducting III-V materials IMPROVED LUMINESCENCE EFFICIENCY LASER-DIODES TEMPERATURE SURFACTANT EMISSION NITROGEN ORIGIN
ISSN号	0022-0248
通讯作者	wu, dh, chinese acad sci, inst semicond, state key lab superlattice & microstruct, beijing 100083, peoples r china. e-mail: wudonghai@red.semi.ac.cn ; zcniu@red.semi.ac.cn
中文摘要	sb-assisted gainnas/gaas quantum wells (qws) with high (42.5%) indium content were investigated systematically. transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (pl) measurements reveal that sb acts as a surfactant to suppress three-dimensional growth. the improvement in the 1.55 mu m range is much more apparent than that in the 1.3 mu m range.. which can be attributed to the difference in n composition. the pl intensity and the full-width at half maximum of the 1.55 mu m single-qw were comparable with that of the 1.3 am qws. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10694]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu DH,Niu ZC,Zhang SY,et al. The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content[J]. journal of crystal growth,2006,290(2):494-497.
APA	Wu DH.,Niu ZC.,Zhang SY.,Ni HQ.,He ZH.,...&Wu RH.(2006).The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content.journal of crystal growth,290(2),494-497.
MLA	Wu DH,et al."The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content".journal of crystal growth 290.2(2006):494-497.