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CORC

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Correlation between the Decoupling Capacitor Layouts and Single-Event-Upset Resistances of SRAM cells 会议论文
作者:  Zhentao Li;  Zheng ZS(郑中山);  Zhao K(赵凯);  Li B(李博);  Luo JJ(罗家俊)
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/13
A Single Event Upset Tolerant Latch Design 会议论文
作者:  Haibin Wang;  Xixi Dai;  Yangsheng Wang;  Issam Nofal;  Li Cai
收藏  |  浏览/下载：35/0  |  提交时间：2019/05/13
A Single Event Upset Tolerant Latch Design 期刊论文
Microelectronics Reliability, 2018
作者:  Haibin Wang;  Xixi Dai;  Yangsheng Wang;  Issam Nofal;  Li Cai
收藏  |  浏览/下载：27/0  |  提交时间：2019/04/12
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：40/0  |  提交时间：2018/10/08
Influences of total ionizing dose on single event effect sensitivity in floating gate cells 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 8, 页码: 086103
作者:  Zhao, Pei-Xiong;  Liu, Tian-Qi;  Ye, Bing;  Luo, Jie;  Sun, You-Mei
收藏  |  浏览/下载：33/0  |  提交时间：2018/10/08
Investigation of flux dependent sensitivity on single event effect in memory devices 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 7, 页码: 076101
作者:  Liu, Tian-qi;  Xi, Kai;  Hou, Ming-dong;  Sun, You-mei;  Duan, Jing-lai
收藏  |  浏览/下载：30/0  |  提交时间：2018/10/08
The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 页码: 1091-1100
作者:  Gu, Song;  Liu, Jie;  Bi, Jinshun;  Zhao, Fazhan;  Zhang, Zhangang
收藏  |  浏览/下载：23/0  |  提交时间：2018/07/16
Anomalous annealing of floating gate errors due to heavy ion irradiation 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 418, 页码: 80-86
作者:  Hou, Mingdong;  Zhao, Peixiong;  Luo, Jie;  Ji, Qinggang;  Ye, Bing
收藏  |  浏览/下载：55/0  |  提交时间：2018/05/31
Detection System of Single Event Upset Based onFPGA 会议论文
中国厦门, 2018
作者:  Bobo Feng;  Cuiping Shao;  Huiyun Li
收藏  |  浏览/下载：19/0  |  提交时间：2019/01/31
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]
收藏  |  浏览/下载：53/0  |  提交时间：2018/09/27

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