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浏览/检索结果: 共14条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147 作者:  Li, Zongzhen;  Liu, Tianqi;  Bi, Jinshun;  Yao, Huijun;  Zhang, Zhenxing 收藏  |  浏览/下载：32/0  |  提交时间：2022/01/19 High-k HfO2  Heavy ion irradiation  Reliability  Charge trapping  Oxygen vacancy   Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 10, 页码: 1634-1637 作者:  Li, Zongzhen;  Liu, Jie;  Zhai, Pengfei;  Liu, Tianqi;  Bi, Jinshun 收藏  |  浏览/下载：10/0  |  提交时间：2022/01/19 HfO2  heavy ion irradiation  reliability degradation  crystallization   The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer 期刊论文 MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 期号: 9, 页码: 1-5 作者:  Xu, YN (Xu, Yannan)[ 1,2 ];  Bi, JS (Bi, Jinshun)[ 1,2 ];  Li, YD (Li, Yudong)[ 3 ];  Xi, K (Xi, Kai)[ 1 ];  Fan, LJ (Fan, Linjie)[ 4 ] 收藏  |  浏览/下载：9/0  |  提交时间：2020/01/19 A Single Event Upset Tolerant Latch Design 期刊论文 Microelectronics Reliability, 2018 作者:  Haibin Wang;  Xixi Dai;  Yangsheng Wang;  Issam Nofal;  Li Cai 收藏  |  浏览/下载：27/0  |  提交时间：2019/04/12 Study of γ-ray irradiation influence on TiN/HfO 2 /Si MOS capacitor by C-V and DLTS 期刊论文 Superlattices and Microstructures, 2018 作者:  Yun Li;  Yao Ma;  Wei Lin;  Peng Dong;  zhimei Yang 收藏  |  浏览/下载：38/0  |  提交时间：2019/04/18 The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018 作者:  Song Gu;  Jie Liu;  Jinshun Bi;  Fazhan Zhao;  zhangang Zhang 收藏  |  浏览/下载：12/0  |  提交时间：2019/04/12 The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 页码: 1091-1100 作者:  Gu, Song;  Liu, Jie;  Bi, Jinshun;  Zhao, Fazhan;  Zhang, Zhangang 收藏  |  浏览/下载：23/0  |  提交时间：2018/07/16 Energy dependence  heavy ions  nuclear reactions  silicon-on-insulator (SOI) technology  single event upset (SEU)   Study of gamma-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: Vol.120, 页码: 313-318 作者:  Li, Yun;  Ma, Yao;  Lin, Wei;  Dong, Peng;  Yang, Zhimei 收藏  |  浏览/下载：17/0  |  提交时间：2019/02/25 TiN/HfO2/Si MOS capacitor  gamma-ray irradiation  Oxide trapped and interface trapped  C-V  DLTS   Study of gamma-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: Vol.120, 页码: 313-318 作者:  Li, Yun;  Ma, Yao;  Lin, Wei;  Dong, Peng;  Yang, Zhimei 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/26 TiN/HfO2/Si  MOS  capacitor  gamma-ray  irradiation  Oxide  trapped  and  interface  trapped  C-V  DLTS   Development of single-event-effects analysis system at the IMP microbeam facility 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 404, 页码: 250-253 作者:  Du, Guanghua;  Bi, Jinshun;  Ma, Shuyi;  Liu, Xiaojun;  Sheng, Lina 收藏  |  浏览/下载：26/0  |  提交时间：2018/05/31