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Study of gamma-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS
Li, Yun; Ma, Yao; Lin, Wei; Dong, Peng; Yang, Zhimei; Gong, Min; Bi, Jinshun; Li, Bo; Xi, Kai; Xu, Gaobo
刊名SUPERLATTICES AND MICROSTRUCTURES
2018
卷号Vol.120页码:313-318
关键词TiN/HfO2/Si MOS capacitor gamma-ray irradiation Oxide trapped and interface trapped C-V DLTS
ISSN号0749-6036
URL标识查看原文
公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5458677
专题湖南大学
作者单位1.Sichuan Univ, Coll Phys Sci & Technol, Key Lab Microelect Sichuan Prov, Chengdu 610064, Sichuan, Peoples R China
2.Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China
3.China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Mianyang 621999, Peoples R China
4.China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Peoples R China
5.Chinese Acad Sci, Inst Microeletron, Beijing 100029, Peoples R China
6.Univ Chinese Acad Sci, Beijing 100029, Peoples R China
推荐引用方式
GB/T 7714
Li, Yun,Ma, Yao,Lin, Wei,et al. Study of gamma-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,Vol.120:313-318.
APA Li, Yun.,Ma, Yao.,Lin, Wei.,Dong, Peng.,Yang, Zhimei.,...&Xu, Gaobo.(2018).Study of gamma-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS.SUPERLATTICES AND MICROSTRUCTURES,Vol.120,313-318.
MLA Li, Yun,et al."Study of gamma-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS".SUPERLATTICES AND MICROSTRUCTURES Vol.120(2018):313-318.
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