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CORC

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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes 期刊论文
chinese physics letters, 2014, 卷号: 31, 期号: 6, 页码: 068502
Kang, H; Wang, Q; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Wang, XL; Wang, ZG; Hou, X
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25
Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文
journal of alloys and compounds, 2014, 卷号: 605, 页码: 113-117
Li, W; Wang, XL; Qu, SQ; Wang, Q; Xiao, HL; Wang, CM; Peng, EC; Hou, X; Wang, ZG
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25
Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 5, 页码: 054502
Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X
收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25
Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
european physical journal-applied physics, 2014, 卷号: 66, 期号: 2, 页码: 20101
Qu, SQ; Wang, XL; Xiao, HL; Hou, X; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Peng, EC; Kang, H; Wang, ZG
收藏  |  浏览/下载：17/0  |  提交时间：2015/04/02
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
european physical journal-applied physics, 2014, 卷号: 68, 期号: 1, 页码: 10105
Qu, SQ; Wang, XL; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Yan, JD; Peng, EC; Kang, H; Wang, ZG; Hou, X
收藏  |  浏览/下载：19/0  |  提交时间：2015/03/20
Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2012, 卷号: 359, 页码: 55-59
Li LG (Li, Li-Gong); Liu SM (Liu, Shu-Man); Luo S (Luo, Shuai); Yang T (Yang, Tao); Wang LJ (Wang, Li-Jun); Liu JQ (Liu, Jun-Qi); Liu FQ (Liu, Feng-Qi); Ye XL (Ye, Xiao-Ling); Xu B (Xu, Bo); Wang ZG (Wang, Zhan-Guo)
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/26
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Wang C
收藏  |  浏览/下载：68/3  |  提交时间：2011/07/05
Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 116802
Li LG (Li Li-Gong); Liu SM (Liu Shu-Man); Luo S (Luo Shuai); Yang T (Yang Tao); Wang LJ (Wang Li-Jun); Liu FQ (Liu Feng-Qi); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：9/0  |  提交时间：2012/02/21
Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306
Deng, QW; Wang, XL; Xiao, HL; Wang, CM; Yin, HB; Chen, H; Lin, DF; Li, JM; Wang, ZG; Hou, X
收藏  |  浏览/下载：15/0  |  提交时间：2012/01/06
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05

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