Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation

	Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation
	Yan, JD ; Wang, XL ; Wang, Q ; Qu, SQ ; Xiao, HL ; Peng, EC ; Kang, H ; Wang, CM ; Feng, C ; Yin, HB ; Jiang, LJ ; Li, BQ ; Wang, ZG ; Hou, X
刊名	journal of applied physics
	2014
卷号	116 期号:5 页码:054502
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26241]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yan, JD,Wang, XL,Wang, Q,et al. Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation[J]. journal of applied physics,2014,116(5):054502.
APA	Yan, JD.,Wang, XL.,Wang, Q.,Qu, SQ.,Xiao, HL.,...&Hou, X.(2014).Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation.journal of applied physics,116(5),054502.
MLA	Yan, JD,et al."Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation".journal of applied physics 116.5(2014):054502.