Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition

	Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
	Pan X; Hou QF
刊名	chinese physics letters
	2011
卷号	28 期号:4 页码:article no.48102
关键词	ELECTRON-MOBILITY TRANSISTORS AL-CONTENT STRESS-CONTROL PHASE EPITAXY ALGAN BUFFER LAYERS HETEROSTRUCTURES INTERLAYERS SILICON
ISSN号	0256-307x
通讯作者	wei, m, chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china. mengw@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	chinese academy of sciences [yyyj-0701-02, is-cas2008t01, iscas2009l01, iscas2009l02]; national natural science foundation of china [60890193, 60906006]; national basic research program of china [2006cb604905, 2010cb327503]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	a 2 mu m high quality crack-free gan film was successfully grown on 2-inch si(111) substrates by metal organic chemical vapor deposition with a high temperature aln/graded-algan multibuffer and an aln/gan superlattice interlayer. it is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free gan epilayer. the gan(0002) xrd fwhm of the crack-free sample is 479.8 arcsec, indicating good crystal quality. an algan/gan heterostructure was grown and tested by van der pauw hall measurement. the electron mobility of two-dimensional electron gas increases from 1928 cm(2)/v.s to 12277 cm(2)/v.s when the test-temperature decreases from room temperature to liquid nitrogen temperature. the electron mobility is comparable to that of algan/gan heterostructures grown on sapphire, and the largest value is obtained for an algan/gan/si(111) heterostructure grown by metal organic chemical vapor deposition.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20815]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Pan X,Hou QF. Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. chinese physics letters,2011,28(4):article no.48102.
APA	Pan X,&Hou QF.(2011).Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition.chinese physics letters,28(4),article no.48102.
MLA	Pan X,et al."Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition".chinese physics letters 28.4(2011):article no.48102.