Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

	Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer
	Qu, SQ ; Wang, XL ; Xiao, HL ; Hou, X ; Wang, CM ; Jiang, LJ ; Feng, C ; Chen, H ; Yin, HB ; Peng, EC ; Kang, H ; Wang, ZG
刊名	european physical journal-applied physics
	2014
卷号	66 期号:2 页码:20101
学科主题	半导体材料
收录类别	SCI
公开日期	2015-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26312]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Qu, SQ,Wang, XL,Xiao, HL,et al. Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer[J]. european physical journal-applied physics,2014,66(2):20101.
APA	Qu, SQ.,Wang, XL.,Xiao, HL.,Hou, X.,Wang, CM.,...&Wang, ZG.(2014).Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer.european physical journal-applied physics,66(2),20101.
MLA	Qu, SQ,et al."Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer".european physical journal-applied physics 66.2(2014):20101.