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Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE 期刊论文
chinese physics b, 2016, 卷号: 25, 期号: 4, 页码: 048105
Dong-Yue Han; Hui-Jie Li; Gui-Juan Zhao; Hong-Yuan Wei; Shao-Yan Yang; Lian-Shan Wang
收藏  |  浏览/下载：16/0  |  提交时间：2017/03/10
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L; Zhou, HY; Qu, SC; Wang, ZG
收藏  |  浏览/下载：91/0  |  提交时间：2012/02/06
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：65/4  |  提交时间：2011/07/05
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan,
收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14

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