Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure

	Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure
	Bi, Yang ; Wang, Xiaoliang ; Xiao, Hongling ; Wang, Cuimei ; Yang, Cuibai ; Peng, Enchao ; Lin, Defeng ; Feng, Chun ; Jiang, Lijuan,
刊名	journal of semiconductors
	2011
卷号	32 期号:8 页码:83003
关键词	Aluminum Electron mobility Gallium nitride High electron mobility transistors Indium Poisson equation Polarization Two dimensional electron gas
ISSN号	16744926
通讯作者	bi, y.(ybi@semi.ac.cn)
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2012-06-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23044]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Bi, Yang,Wang, Xiaoliang,Xiao, Hongling,et al. Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure[J]. journal of semiconductors,2011,32(8):83003.
APA	Bi, Yang.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Jiang, Lijuan,.(2011).Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure.journal of semiconductors,32(8),83003.
MLA	Bi, Yang,et al."Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure".journal of semiconductors 32.8(2011):83003.