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大连理工大学 [4]

兰州理工大学 [2]

长春光学精密机械与物... [2]

厦门大学 [1]

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	Towards tailorable interface microstructure through Solid-state interface reaction between synthetic diamond grits and sputtered Ni-Cr binary alloy 期刊论文 Applied Surface Science, 2022, 卷号: 596 作者: Cheng, Wei; Liu, Zhuo; Lin, Qiaoli; Huang, Guoqin; Xu, Xipeng 收藏 \| 浏览/下载：28/0 \| 提交时间：2022/06/20 Binary alloys Calculations Carbides Chromium alloys Chromium compounds Crystal orientation Deformation Interface states Microstructure Phase interfaces Phase transitions Single crystals Superalloys Catalytic mechanisms Crystal planes Diamond grits First principle calculations Geometric optimization Interface mi-crostructure Interface microstructures Interface reactions Phases transformation Solid-state
	Interfacial microstructures and mechanical integrity of synthetic diamond brazed by a low-temperature Cu-Sn-Cr filler alloy 期刊论文 DIAMOND AND RELATED MATERIALS, 2019, 卷号: 97 作者: Li, Mian; Chen, Jinchang; Lin, Qiaoli; Wu, Yueqin; Mu, Dekui 收藏 \| 浏览/下载：14/0 \| 提交时间：2019/11/15 Synthetic diamond Brazing Cu-Sn-Cr alloy Interface reaction Mechanical properties
	High efficiency abrasive waterjet dressing of diamond grinding wheel 会议论文 17th International Symposium on Advances in Abrasive Technology, ISAAT 2014, September 22, 2014 - September 25, 2014, Kailua, HI, United states Yao P.; Wei W.; Huang C. Z.; Wang J.; Zhu H. T.; Zhang Z. Y. 收藏 \| 浏览/下载：111/0 \| 提交时间：2015/04/27
	Nanoscale Material Removal Mechanism of Soft-Brittle HgCdTe Single Crystals Under Nanogrinding by Ultrafine Diamond Grits 期刊论文 TRIBOLOGY LETTERS, 2012, 卷号: 46, 页码: 95-100 作者: Zhang, Zhenyu; Song, Yaxing; Huo, Fengwei; Guo, Dongming 收藏 \| 浏览/下载：3/0 \| 提交时间：2019/12/13 Non-ferrous alloys Grinding SEM TEM Wear mechanisms
	A novel model for undeformed nanometer chips of soft-brittle HgCdTe films induced by ultrafine diamond grits 期刊论文 SCRIPTA MATERIALIA, 2012, 卷号: 67, 页码: 197-200 作者: Zhang, Zhenyu; Song, Yaxing; Xu, Chaoge; Guo, Dongming 收藏 \| 浏览/下载：9/0 \| 提交时间：2019/12/13 Nanometer chip Ultrafine grit TEM HgCdTe Nanogrinding
	Fabrication and size prediction of crystalline nanoparticles of silicon induced by nanogrinding with ultrafine diamond grits 期刊论文 SCRIPTA MATERIALIA, 2012, 卷号: 67, 页码: 657-660 作者: Zhang, Zhenyu; Huo, Fengwei; Zhang, Xianzhong; Guo, Dongming 收藏 \| 浏览/下载：3/0 \| 提交时间：2019/12/13 Nanoparticle Transmission electron microscopy Nanogrinding Silicon Undeformed chip thickness
	Morphology and distribution of subsurface damage in optical fused silica parts: Bound-abrasive grinding 期刊论文 http://dx.doi.org/10.1016/j.apsusc.2010.09.051, 2011 Li, Yaguo; Zheng, Nan; Li, Haibo; Hou, Jing; Lei, Xiangyang; Chen, Xianhua; Yuan, Zhigang; Guo, Zhaozhou; Wang, Jian; Guo, Yinbiao; Xu, Qiao; 郭隐彪收藏 \| 浏览/下载：2/0 \| 提交时间：2015/07/22 SURFACE-ROUGHNESS ANOMALOUS GLASSES THRESHOLD CRACKS
	Phase transformation of single crystal silicon induced by grinding with ultrafine diamond grits 期刊论文 SCRIPTA MATERIALIA, 2011, 卷号: 64, 页码: 177-180 作者: Zhang, Zhenyu; Wu, Yueqin; Guo, Dongming; Huang, Han 收藏 \| 浏览/下载：3/0 \| 提交时间：2019/12/18 Transmission electron microscopy (TEM) Semiconductors Nanocrystalline microstructure Plastic deformation Phase transformations
	Low threshold field electron emission of diamond films (EI CONFERENCE) 会议论文 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Liu L.; Xia Y.; Chen S.; Lei D.; Zhao H.; Liang J.; Li M.; Wang W.; Gu C.; Ji H. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 Since CVD diamond film possesses desirable properties it has been widely investigated and much research has been made in this field. In this experiment we mainly studied the characteristics of field emission from the CVD diamond films. The motivation for the experiment is to gain some insight into a possible emission mechanism. The diamond films are grown using a hot filament chemical vapor deposition basing on the diamond micro-grits on silicon substrates. And the diamond micro-grits are deposited on silicon substrates using electrophoresis coat method through a solution of diamond micro-grits in ethyl alcohol. This study has revealed that emission can be obtained at fields as low as 1.8V/m. And the field emission measurements were carried out at a pressure of 10-4Pa.

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