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CORC

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Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 卷号: 68, 期号: 4, 页码: 2049-2055
作者:  Guo, Jingrui;  Zhao, Ying;  Yang, Guanhua;  Chuai, Xichen;  Lu, Wenhao
收藏  |  浏览/下载：85/0  |  提交时间：2021/06/01
Fully Printed Top-Gate Metal-Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 445-450
作者:  Li, Yuzhi[1];  Lan, Linfeng[2];  Hu, Shiben[3];  Gao, Peixiong[4];  Dai, Xingqiang[5]
收藏  |  浏览/下载：19/0  |  提交时间：2019/04/22
Enhanced Stability in Zr-Doped ZnO TFTs With Minor Influence on Mobility by Atomic Layer Deposition 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 1760-1765
作者:  Yang, Jun[1];  Zhang, Yongpeng[2];  Qin, Cunping[3];  Ding, Xingwei[4];  Zhang, Jianhua[5]
收藏  |  浏览/下载：10/0  |  提交时间：2019/04/22
Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors 期刊论文
APPLIED SURFACE SCIENCE, 2019, 卷号: 475
作者:  Abliz, Ablat;  Xu, Lei;  Wan, Da;  Duan, Haiming;  Wang, Jingli
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/05
Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 1, 页码: 36-39
作者:  Cai, Wensi;  Wilson, Joshua;  Zhang, Jiawei;  Park, Seonghyun;  Majewski, Leszek
收藏  |  浏览/下载：46/0  |  提交时间：2019/12/11
Polymer-Doped Ink System for Threshold Voltage Modulation in Printed Metal Oxide Thin Film Transistors 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2019, 卷号: 10, 页码: 3415-3419
作者:  Zhu, Zhennan;  Zhang, Jianhua;  Wang, Yiping;  Ning, Honglong;  Guo, Dong
收藏  |  浏览/下载：40/0  |  提交时间：2019/12/30
Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 1018-1022
作者:  Wan, Da;  Liu, Xingqiang;  Abliz, Ablat;  Liu, Chuansheng;  Yang, Yanbing
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/21
Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 2844-2849
作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei
收藏  |  浏览/下载：9/0  |  提交时间：2019/11/21
Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 520-525
作者:  Zhong, De-Yao[1];  Li, Jun[2];  Zhao, Cheng-Yu[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5]
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24
Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 526-532
作者:  Zhao, Cheng-Yu[1];  Li, Jun[2];  Zhong, De-Yao[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5]
收藏  |  浏览/下载：16/0  |  提交时间：2019/04/24

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