QQ客服 官方微博 反馈留言

	Fully Printed Top-Gate Metal-Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric
	Li, Yuzhi[1]; Lan, Linfeng[2]; Hu, Shiben[3]; Gao, Peixiong[4]; Dai, Xingqiang[5]; He, Penghui[6]; Li, Xifeng[7]; Peng, Junbiao[8]
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2019
卷号	66页码:445-450
关键词	Inkjet printing scandium zirconium oxide (Sc1Zr1Ox) thin-film transistors (TFTs) top gate
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2164368
专题	上海大学
作者单位	1.[1]South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China. 2.[2]South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China. 3.[3]South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China. 4.[4]South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China. 5.[5]South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China. 6.[6]South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China. 7.[7]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 8.[8]South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China.
推荐引用方式 GB/T 7714	Li, Yuzhi[1],Lan, Linfeng[2],Hu, Shiben[3],et al. Fully Printed Top-Gate Metal-Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66:445-450.
APA	Li, Yuzhi[1].,Lan, Linfeng[2].,Hu, Shiben[3].,Gao, Peixiong[4].,Dai, Xingqiang[5].,...&Peng, Junbiao[8].(2019).Fully Printed Top-Gate Metal-Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric.IEEE TRANSACTIONS ON ELECTRON DEVICES,66,445-450.
MLA	Li, Yuzhi[1],et al."Fully Printed Top-Gate Metal-Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric".IEEE TRANSACTIONS ON ELECTRON DEVICES 66(2019):445-450.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。