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A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design 会议论文
Guilin, China, June 4-6, 2021
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Xie C(谢闯);  Yang ZJ(杨志家)
收藏  |  浏览/下载：11/0  |  提交时间：2022/02/04
First-principles investigations on MXene-blue phosphorene and MXene-MoS(2)transistors 期刊论文
NANOTECHNOLOGY, 2020, 卷号: 31, 期号: 39
作者:  Zhou, Yuhong;  Zhuge, Xia;  An, Peng;  Du, Shiyu
收藏  |  浏览/下载：10/0  |  提交时间：2020/12/16
Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 249-254
作者:  Yongwei Chang;  Jiexin Luo;  Jing Chen;  Lingda Xu;  Zhan Chai
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/13
Research on Hybrid Reactive Power Compensation Switch Based on Vacuum Switch 会议论文
28th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2018, Greifswald, Germany, 2018-09-23
作者:  Zhu, Yu;  Dong, Enyuan;  Wang, Yongxing;  Dong, Keqian;  Liu, Jun
收藏  |  浏览/下载：26/0  |  提交时间：2019/12/02
Extended Hydrodynamic Models and Multigrid Solver of a Silicon Diode Simulation 其他
2016-01-01
Hu, Zhicheng; Li, Ruo; Qiao, Zhonghua
收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03
A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory 期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2016
Lun, Zhiyuan; Du, Gang; Zhao, Kai; Liu, Xiaoyan; Wang, Yi
收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03
A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory 期刊论文
Science China. Information Science, 2016
Lun Zhiyuan; Du Gang; Zhao Kai; Liu Xiaoyan; Wang Yi
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory 期刊论文
Science China(Information Sciences), 2016
Zhiyuan LUN; Gang DU; Kai ZHAO; Xiaoyan LIU; Yi WANG
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Physics-based compact model for the EMCON p-i-n diode using MATLAB and Simulink 期刊论文
IET POWER ELECTRONICS, 2016, 卷号: 9, 页码: 2416-2424
作者:  Xue, Peng;  Fu, Guicui;  Zhang, Dong
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/30
Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain 期刊论文
44th European Solid-State Device Research Conference (ESSDERC), 2015
Chang, Pengying; Liu, Xiaoyan; Zeng, Lang; Du, Gang
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03

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