Hole mobility in InSb-based devices: Dependence on surface orientation,   body thickness, and strain

doi:10.1016/j.sse.2015.05.017

CORC > 北京大学 > 信息科学技术学院

	Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
	Chang, Pengying ; Liu, Xiaoyan ; Zeng, Lang ; Du, Gang
刊名	44th European Solid-State Device Research Conference (ESSDERC)
	2015
关键词	Surface orientation Strain Hole mobility InSb III-V semiconductor Modeling V COMPOUND SEMICONDUCTORS DEFORMATION POTENTIALS INVERSION-LAYERS
DOI	10.1016/j.sse.2015.05.017
英文摘要	We investigate hole mobility in InSb-based ultrathin body (UTB) devices based on physical modeling. For arbitrary surface orientation, the dependence of hole mobility on body thickness and biaxial strain is evaluated. The anisotropic band structures under quantum confinement are computed by solving the six-band k.p Schrodinger and Poisson equations in a self-consistent way. Hole mobility is calculated by the Kubo-Greenwood formula. Physical models include acoustic and optical phonons, polar optical phonons, and surface roughness scattering mechanisms. Our results show that in InSb-based devices with various surface orientations, hole mobility begins to deteriorate as body thickness is reduced below a certain range. It is important that mobility improvement from non-(001) surface orientation is observed, especially for extremely thin body. With regard to biaxial strain, compressive strain is effective to enhance hole mobility for different orientations. Additionally, in both unstrained and strained cases, the optimal surface/channel direction for hole mobility is obtained along the (110)/[(1) over bar 10] direction, followed by (111)/any, (110)/[001], and (001)/any directions. (C) 2015 Elsevier Ltd. All rights reserved.; SCI(E); ARTICLE; 68-72; 113
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/459253]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chang, Pengying,Liu, Xiaoyan,Zeng, Lang,et al. Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain[J]. 44th European Solid-State Device Research Conference (ESSDERC),2015.
APA	Chang, Pengying,Liu, Xiaoyan,Zeng, Lang,&Du, Gang.(2015).Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain.44th European Solid-State Device Research Conference (ESSDERC).
MLA	Chang, Pengying,et al."Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain".44th European Solid-State Device Research Conference (ESSDERC) (2015).