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Radiation impact of swift heavy ion beams on double-interface CoFeB/MgO magnetic tunnel junctions
期刊论文
APPLIED PHYSICS LETTERS, 2020, 卷号: 116, 期号: 17, 页码: 5
作者:
Wang, Bi
;
Wang, Zhaohao
;
Du, Ao
;
Qiang, You
;
Cao, Kaihua
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2022/01/18
Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction
期刊论文
APPLIED SURFACE SCIENCE, 2020, 卷号: 505
作者:
Li, Fangfang
;
Yang, Baishun
;
Zhu, Yu
;
Han, Xiufeng
;
Yan, Yu
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2020/12/16
FERROMAGNETISM
Heavy ion irradiation induced hard error in MTJ of the MRAM memory array
期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 7
作者:
Zhao, P. X.
;
Liu, T. Q.
;
Cai, C.
;
Li, D. Q.
;
Ji, Q. G.
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  |  
浏览/下载:6/0
  |  
提交时间:2022/01/19
MTJ damage
Heavy ion
Displacement damage
Hard bit error
Annealing effect
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 8, 页码: 1851-1860
作者:
Wu, Bi
;
Zhang, Beibei
;
Cheng, Yuanqing
;
Wang, Ying
;
Liu, Dijun
收藏
  |  
浏览/下载:69/0
  |  
提交时间:2019/12/10
Error correction code (ECC)
last level cache (LLC)
reliability
spin-transfer-torque magnetoresistive random-access memory (STT-MRAM)
temperature
Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2019, 卷号: 55
作者:
Cao, Kaihua
;
Li, Huisong
;
Cai, Wenlong
;
Wei, Jiaqi
;
Wang, Lezhi
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  |  
浏览/下载:29/0
  |  
提交时间:2019/12/30
Perpendicular magnetic tunnel junction (p-MTJ)
spin transfer torque (STT)
spintronics
temperature dependence
Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 239-250
作者:
Cai, Hao
;
Wang, You
;
Naviner, Lirida Alves de Barros
;
Liu, Xinning
;
Shan, Weiwei
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/30
Fully depleted silicon-on-insulator (FDSOI)
magnetic tunnel junction (MTJ)
spin transfer torque magnetic random access memory (STT-MRAM)
voltage-controlled magnetic anisotropy (VCMA)
magnetoelectric random access memory (MeRAM)
aging
reliability
variability
Compact Modeling of Perpendicular-Magnetic-Anisotropy Double-Barrier Magnetic Tunnel Junction With Enhanced Thermal Stability Recording Structure
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2431-2436
作者:
Wang, Guanda
;
Zhang, Yue
;
Wang, Jinkai
;
Zhang, Zhizhong
;
Zhang, Kun
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/30
Compact modeling
double barrier
magnetic tunnel junction (MTJ)
spin transfer torque (STT)
thermal stability
Compact Model for Negative Capacitance Enhanced Spintronics Devices
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2795-2801
作者:
Gao, Tianqi
;
Zeng, Lang
;
Zhang, Deming
;
Zhang, Youguang
;
Wang, Kang L.
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/30
All spin logic (ASL) device
compact model
magnetic tunnel junction (MTJ)
negative capacitance (NC) effect
spin transfer torque (STT)
voltage-controlled magnetic anisotropy (VCMA)
Exploring Hybrid STT-MTJ/CMOS Energy Solution in Near-/Sub-Threshold Regime for IoT Applications
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2018, 卷号: 54
作者:
Cai, Hao
;
Wang, You
;
Naviner, Lirida Alves de Barros
;
Yang, Jun
;
Zhao, Weisheng
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/30
Flip-flop (FF)
forward back bias (FBB)
fully depleted silicon on insulator (FD-SOI)
magnetic tunnel junction (MTJ)/CMOS integration
near-/sub-threshold
ultralow power
Demonstration of Multi-State Memory Device Combining Resistive and Magnetic Switching Behaviors
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 页码: 684-687
作者:
Zhang, Yu
;
Cai, Wenlong
;
Kang, Wang
;
Yang, Jianlei
;
Deng, Erya
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/30
Magnetic tunnel junction (MTJ)
multi-level cell
logic-in-memory
nonvolatile memory
spintronics
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