×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [62]
上海微系统与信息技... [38]
北京航空航天大学 [22]
微电子研究所 [22]
物理研究所 [21]
化学研究所 [20]
更多...
内容类型
期刊论文 [345]
会议论文 [23]
其他 [22]
外文期刊 [13]
专利 [9]
学位论文 [8]
更多...
发表日期
2021 [4]
2020 [9]
2019 [30]
2018 [23]
2017 [51]
2016 [38]
更多...
学科主题
Physics, ... [10]
Physics, M... [8]
Physics [4]
微电子学 [4]
Engineerin... [3]
Materials ... [3]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共421条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions
期刊论文
PHYSICAL REVIEW APPLIED, 2022, 卷号: 17
作者:
Xiao, Wei
;
Kang, Lili
;
Hao, Hua
;
Zhou, Yanhong
;
Zheng, Xiaohong
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/05/16
Domain-wall induced giant tunneling electroresistance effect in two-dimensional Graphene/In2Se3 ferroelectric tunnel junctions
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2021, 卷号: 133
作者:
Kang, Lili
;
Jiang, Peng
;
Zhang, Xiaoli
;
Hao, Hua
;
Zheng, Xiaohong
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2021/08/31
Ferroelectric tunnel junctions
Tunneling electroresistance effect
Domain walls
Quantum transport
First principles
Co-Active: A Workload-Aware Collaborative Cache Management Scheme for NVMe SSDs
期刊论文
IEEE TRANSACTIONS ON PARALLEL AND DISTRIBUTED SYSTEMS, 2021, 卷号: 32, 期号: 6, 页码: 1437-1451
作者:
Sun, Hui
;
Dai, Shangshang
;
Huang, Jianzhong
;
Qin, Xiao
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/12/01
Time factors
Nonvolatile memory
Memory management
Parallel processing
Sun
Protocols
Degradation
Cache management
NAND flash
solid state disks
proactive write back
Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials
期刊论文
PHYSICAL REVIEW B, 2021, 卷号: 103
作者:
Kang, Lili
;
Jiang, Peng
;
Hao, Hua
;
Zhou, Yanhong
;
Zheng, Xiaohong
收藏
  |  
浏览/下载:57/0
  |  
提交时间:2021/06/15
Self-Assembled Peptide Nanofibers with Voltage-Regulated Inverse Photoconductance
期刊论文
ACS Applied Materials and Interfaces, 2021, 卷号: 13, 期号: 1, 页码: 1057-1064
作者:
Shi HY(石慧瑶)
;
Li ML(李明林)
;
Shi JL(施佳林)
;
Zhang DD(张鼎冬)
;
Fan Z(范震)
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2021/02/14
peptide
nanomaterial
self-assembly
inverse photoconductance
visual memory
optoelectronic device
Long Live TIME: Improving Lifetime and Security for NVM-Based Training-in-Memory Systems
期刊论文
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2020, 卷号: 39, 期号: 12, 页码: 4707-4720
作者:
Cai, Yi
;
Lin, Yujun
;
Xia, Lixue
;
Chen, Xiaoming
;
Han, Song
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2021/12/01
Gradient sparsification
lifetime
neural networks
training-in-memory
wear-leveling
Enabling Secure NVM-Based in-Memory Neural Network Computing by Sparse Fast Gradient Encryption
期刊论文
IEEE TRANSACTIONS ON COMPUTERS, 2020, 卷号: 69, 期号: 11, 页码: 1596-1610
作者:
Cai, Yi
;
Chen, Xiaoming
;
Tian, Lu
;
Wang, Yu
;
Yang, Huazhong
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2020/12/10
Artificial neural networks
Nonvolatile memory
Encryption
Computational modeling
Hardware
Non-volatile memory (NVM)
compute-in-memory (CIM)
neural network
security
encryption
Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory
期刊论文
JOURNAL OF MATERIOMICS, 2020, 卷号: 6
作者:
Yang, Bingbing
;
Li, Chenhui
;
Liu, Miao
;
Wei, Renhuai
;
Tang, Xianwu
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2020/10/26
Inorganic ferroelectric
Flexible electronics
Lead-free BiFe0.93Mn0.07O3
Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
期刊论文
Acta Materialia, 2020, 卷号: 187, 页码: 12-18
作者:
Han, M.J.
;
Tang, Y.L.
;
Wang, Y.J.
;
Zhu, Y.L.
;
Ma, J.Y.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2020/11/14
Bismuth compounds
Digital storage
Heterojunctions
High resolution transmission electron microscopy
Iron compounds
Scanning probe microscopy
Switching
Transmission electron microscopy
Tunnel junctions
Charged domain wall
Conductive filaments
Macroscopic and microscopic
Nonvolatile memory devices
Piezoresponse force microscopy
Resistance switching behaviors
Resistive switching behaviors
Technological applications
Anti-oxidative passivation and electrochemical activation of black phosphorusviacovalent functionalization and its nonvolatile memory application
期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2020, 卷号: 8, 期号: 22, 页码: 7309-7313
作者:
Chen, Weilin
;
Gao, Shuang
;
Xie, Zhuolin
;
Lu, Ying
;
Gong, Guodong
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2020/12/16
PHOSPHORUS
©版权所有 ©2017 CSpace - Powered by
CSpace