QQ客服 官方微博 反馈留言

	Compact Model for Negative Capacitance Enhanced Spintronics Devices
	Gao, Tianqi; Zeng, Lang; Zhang, Deming; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2019
卷号	66页码:2795-2801
关键词	All spin logic (ASL) device compact model magnetic tunnel junction (MTJ) negative capacitance (NC) effect spin transfer torque (STT) voltage-controlled magnetic anisotropy (VCMA)
ISSN号	0018-9383
DOI	10.1109/TED.2019.2908957
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000468228100052
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5919435
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Gao, Tianqi,Zeng, Lang,Zhang, Deming,et al. Compact Model for Negative Capacitance Enhanced Spintronics Devices[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66:2795-2801.
APA	Gao, Tianqi,Zeng, Lang,Zhang, Deming,Zhang, Youguang,Wang, Kang L.,&Zhao, Weisheng.(2019).Compact Model for Negative Capacitance Enhanced Spintronics Devices.IEEE TRANSACTIONS ON ELECTRON DEVICES,66,2795-2801.
MLA	Gao, Tianqi,et al."Compact Model for Negative Capacitance Enhanced Spintronics Devices".IEEE TRANSACTIONS ON ELECTRON DEVICES 66(2019):2795-2801.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。