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	Demonstration of Multi-State Memory Device Combining Resistive and Magnetic Switching Behaviors
	Zhang, Yu; Cai, Wenlong; Kang, Wang; Yang, Jianlei; Deng, Erya; Zhang, You-Guang; Zhao, Weisheng; Ravelosona, Dafine
刊名	IEEE ELECTRON DEVICE LETTERS
	2018
卷号	39页码:684-687
关键词	Magnetic tunnel junction (MTJ) multi-level cell logic-in-memory nonvolatile memory spintronics
ISSN号	0741-3106
DOI	10.1109/LED.2018.2821662
URL标识	查看原文
收录类别	SCIE
WOS记录号	WOS:000432990700010
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5934432
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Zhang, Yu,Cai, Wenlong,Kang, Wang,et al. Demonstration of Multi-State Memory Device Combining Resistive and Magnetic Switching Behaviors[J]. IEEE ELECTRON DEVICE LETTERS,2018,39:684-687.
APA	Zhang, Yu.,Cai, Wenlong.,Kang, Wang.,Yang, Jianlei.,Deng, Erya.,...&Ravelosona, Dafine.(2018).Demonstration of Multi-State Memory Device Combining Resistive and Magnetic Switching Behaviors.IEEE ELECTRON DEVICE LETTERS,39,684-687.
MLA	Zhang, Yu,et al."Demonstration of Multi-State Memory Device Combining Resistive and Magnetic Switching Behaviors".IEEE ELECTRON DEVICE LETTERS 39(2018):684-687.

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