Heavy ion irradiation induced hard error in MTJ of the MRAM memory array

doi:10.1016/j.microrel.2019.06.039

	Heavy ion irradiation induced hard error in MTJ of the MRAM memory array
	Zhao, P. X.1,2; Liu, T. Q.1; Cai, C.1,2; Li, D. Q.1,2; Ji, Q. G.1,2; He, Z.1,2; Zhai, P. F.1; Sun, Y. M.1; Gu, S.3; Liu, J.1
刊名	MICROELECTRONICS RELIABILITY
	2019-09-01
卷号	100 页码:7
关键词	MTJ damage Heavy ion Displacement damage Hard bit error Annealing effect
ISSN号	0026-2714
DOI	10.1016/j.microrel.2019.06.039
通讯作者	Liu, J.(j.liu@impcas.ac.cn)
英文摘要	The radiation effects of magnetic tunnel junction (MTJ) in a 180 nm Magnetoresistive Random Access Memory (MRAM) were investigated at the condition of the high heavy ion fluence (up to 10(10) ions center dot cm(-2)) and high gamma-ray dose (up to 15 Mrad(Si)), respectively. The Hard Bit Error (HBE) was only observed when the energy of Ta-181 ions was larger than 95.8 MeV under the ion fluence of 10(9) ions center dot cm(-2) (similar to 13 ions center dot bit(-1)). For gamma-ray exposure, no obvious effects were observed in devices. The HBE counts induced by Ta-181 ions have a strong dependence on ion energy and cumulative fluence. In addition, the annealing characteristics of HBE after heavy ion irradiation at room temperature were also observed. It is found that the high ambient temperature is able to accelerate this annealing process. Monte Carlo simulation by using TRIM program revealed that the displacement damages induced by heavy ions were mainly located in the insulating layer of MTJ, which is responsible for the occurrence of HBE.
资助项目	National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11605134]
WOS关键词	MAGNETIC TUNNEL-JUNCTIONS ; RADIATION ; OXIDE
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000503907900147
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/141402]
专题	中国科学院近代物理研究所
通讯作者	Liu, J.
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China 3.China Acad Space Technol, Xian 710100, Shaanxi, Peoples R China
推荐引用方式 GB/T 7714	Zhao, P. X.,Liu, T. Q.,Cai, C.,et al. Heavy ion irradiation induced hard error in MTJ of the MRAM memory array[J]. MICROELECTRONICS RELIABILITY,2019,100:7.
APA	Zhao, P. X..,Liu, T. Q..,Cai, C..,Li, D. Q..,Ji, Q. G..,...&Liu, J..(2019).Heavy ion irradiation induced hard error in MTJ of the MRAM memory array.MICROELECTRONICS RELIABILITY,100,7.
MLA	Zhao, P. X.,et al."Heavy ion irradiation induced hard error in MTJ of the MRAM memory array".MICROELECTRONICS RELIABILITY 100(2019):7.