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First-principles study of He retention and clustering in Al-Ga alloy
期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS C, 2022
作者:
Wei, Liuming
;
Li, Jingyu
;
Li, Yonggang
;
Ye, Xiaoqiu
;
Niu, Caoping
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/12/23
He ion-irradiation
Al-Ga alloy
first-principles
He clusters
Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface
期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS C, 2022
作者:
Yang, Yuming
;
Zhang, Xuemei
;
Liu, Jun
;
Zhang, Chuanguo
;
Li, Yonggang
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2022/12/23
GaN
AlN interface
strain effects
intrinsic point defects
first-principles calculations
diffusion barrier
Long-term behavior of vacancy defects in Pu-Ga alloy: Effects of temperature and Ga concentration
期刊论文
COMPUTATIONAL AND THEORETICAL CHEMISTRY, 2021, 卷号: 1204, 页码: 10
作者:
Xu, Lei
;
Wang, Li-Fang
;
Chen, Xin
;
Gao, Xing-Yu
;
Shang, Hong-Hui
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  |  
浏览/下载:53/0
  |  
提交时间:2021/12/01
Vacancy defects
Dynamical evolution
Pu-Ga alloy
Actinide metals
Atomistic kinetic Monte Carlo
Molecular dynamics
Characterization of Zn-doped GaN grown by metal-organic vapor phase epitaxy
期刊论文
Rare Metals, 2020, 卷号: 39, 期号: 11, 页码: 1328-1332
作者:
C. T. Wu,Y. Zhou,Q. Y. Sun,L. Q. Huang,A. L. Li and Z. M. Li
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  |  
浏览/下载:3/0
  |  
提交时间:2021/07/06
Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation
期刊论文
APPLIED SURFACE SCIENCE, 2018, 卷号: 440, 页码: 814-820
作者:
Xian, Y. Q.
;
Zhang, L. Q.
;
Li, J. Y.
;
Su, C. H.
;
Chen, Y. G.
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  |  
浏览/下载:36/0
  |  
提交时间:2018/05/22
GaN
Highly-charged bismuth-ion irradiation
Raman spectrum
Varying temperature photoluminescence (PL) spectrum
Optoelectric properties
GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect
期刊论文
APPLIED SURFACE SCIENCE, 2018, 卷号: 441, 期号: 5, 页码: 401-407
作者:
Rozahun, I (Rozahun, Ilmira)
;
Bahti, T (Bahti, Tohtiaji)
;
He, GJ (He, Guijie)
;
Ghupur, Y (Ghupur, Yasenjan)
;
Ablat, A (Ablat, Abduleziz)
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  |  
浏览/下载:27/0
  |  
提交时间:2018/05/07
First-principles Calculation
Gaas Monolayer
Shg Response
Vacancy
Significant improvement in the thermoelectric performance of Sb-incorporated chalcopyrite compounds Cu18Ga25Sb: XTe50- x (x = 0-3.125) through the coordination of energy band and crystal structures
期刊论文
Journal of Materials Chemistry A, 2017, 卷号: 5, 期号: 46, 页码: 24199-24207
作者:
Zhu, Junhao
;
Luo, Yong
;
Cai, Gemei
;
Liu, Xianglian
;
Du, Zhengliang
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  |  
浏览/下载:18/0
  |  
提交时间:2020/11/14
Carrier concentration
Copper compounds
Crystal structure
Semiconducting gallium compounds
Semiconducting tellurium compounds
Thermoelectricity
Valence bands
Chalcopyrite semiconductor
Hall carrier concentrations
Lattice disorders
Low thermal conductivity
Power factors
Structure distortions
Ternary chalcopyrites
Thermoelectric performance
Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
Liu, Xiang
;
Wang, Lisa Ling
;
Hu, Hehe
;
Lu, Xinhong
;
Wang, Ke
;
Wang, Gang
;
Zhang, Shengdong
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
a-IGZO TFTs
back-channel-etch (BCE)
plasma treatment
threshold voltage shift
THRESHOLD VOLTAGE
SHIFT
OXIDE
GATE
Comparative study of a-IGZO TFTs with direct current and radio frequency sputtered channel layers
期刊论文
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2015
Deng, Wei
;
Xiao, Xiang
;
He, Xin
;
Lee, Chia-Yu
;
Zhang, Shengdong
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
amorphous indium-gallium-zinc oxide (a-IGZO)
RF sputtering
DC sputtering
oxygen vacancy
stability
THIN-FILM TRANSISTORS
TRANSPORT
Room Temperature Ferromagnetism in Si-Doped GaN Powders
期刊论文
SCIENCE OF ADVANCED MATERIALS, 2014, 卷号: 6, 期号: 2, 页码: 263
Ababakri, R
;
Song, B
;
Wang, G
;
Zhang, ZH
;
Wu, R
;
Li, J
;
Jian, JK
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  |  
浏览/下载:30/0
  |  
提交时间:2015/04/14
Ferromagnetism
Diluted Magnetic Semiconductors
Si-Doped GaN
Gallium Vacancy
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