Performance and Stability Improvements of Back-Channel-Etched Amorphous   Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment

doi:10.1109/LED.2015.2456034

CORC > 北京大学 > 信息科学技术学院

	Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment
	Liu, Xiang ; Wang, Lisa Ling ; Hu, Hehe ; Lu, Xinhong ; Wang, Ke ; Wang, Gang ; Zhang, Shengdong
刊名	IEEE ELECTRON DEVICE LETTERS
	2015
关键词	a-IGZO TFTs back-channel-etch (BCE) plasma treatment threshold voltage shift THRESHOLD VOLTAGE SHIFT OXIDE GATE
DOI	10.1109/LED.2015.2456034
英文摘要	The performance and stability improvement of back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) by post CF4+O-2 plasma treatment is investigated. It is revealed that the metal residue of the wet-etching of source/drain electrodes degrades TFT performance and aggravates the positive threshold voltage (V-th) shift under positive gate bias stress. It is demonstrated that the CF4+O-2 plasma treatment effectively removes the metal residue and remarkably improves device performance and the Vth stability. This improvement is attributed to oxygen vacancy repairing at the back channel interface of the a-IGZO TFT by the O free radicals generated by the O-2 plasma.; National Science Foundation of China [61274084]; SCI(E); EI; ARTICLE; zhangsd@pku.edu.cn; 9; 911-913; 36
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/416846]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Xiang,Wang, Lisa Ling,Hu, Hehe,et al. Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment[J]. IEEE ELECTRON DEVICE LETTERS,2015.
APA	Liu, Xiang.,Wang, Lisa Ling.,Hu, Hehe.,Lu, Xinhong.,Wang, Ke.,...&Zhang, Shengdong.(2015).Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment.IEEE ELECTRON DEVICE LETTERS.
MLA	Liu, Xiang,et al."Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment".IEEE ELECTRON DEVICE LETTERS (2015).