GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect

doi:10.1016/j.apsusc.2018.02.045

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect
	Rozahun, I (Rozahun, Ilmira); Bahti, T (Bahti, Tohtiaji); He, GJ (He, Guijie); Ghupur, Y (Ghupur, Yasenjan); Ablat, A (Ablat, Abduleziz); Mamat, M (Mamat, Mamatrishat)
刊名	APPLIED SURFACE SCIENCE
	2018
卷号	441 期号:5 页码:401-407
关键词	First-principles Calculation Gaas Monolayer Shg Response Vacancy
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2018.02.045
英文摘要	Monolayer materials are considered as a promising candidate for novel applications due to their attractive magnetic, electronic and optical properties. Investigation on nonlinear optical (NLO) properties and effect of vacancy on monolayer materials are vital to property modulations of monolayers and extending their applications. In this work, with the aid of first-principles calculations, the crystal structure, electronic, magnetic, and optical properties of GaAs monolayers with the vacancy were investigated. The result shows gallium arsenic (GaAs) monolayer produces a strong second harmonic generation (SHG) response. Meanwhile, the vacancy strongly affects structural, electronic, magnetic and optical properties of GaAs monolayers. Furthermore, arsenic vacancy (VAS) brings semi metallic to metallic transition, while gallium vacancy (VGa) causes nonmagnetic to magnetic conversion. Our result reveals that GaAs mono layer possesses application potentials in Nano-amplifying modulator and Nano-optoelectronic devices, and may provide useful guidance in designing new generation of Nano-electronic devices. (C) 2018 Elsevier B.V. All rights reserved.
WOS记录号	WOS:000427816400049
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/5267]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
作者单位	1.Xinjiang Univ, Sch Phys & Technol, 666 Victory Rd, Urumqi 830046, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
推荐引用方式 GB/T 7714	Rozahun, I ,Bahti, T ,He, GJ ,et al. GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect[J]. APPLIED SURFACE SCIENCE,2018,441(5):401-407.
APA	Rozahun, I ,Bahti, T ,He, GJ ,Ghupur, Y ,Ablat, A ,&Mamat, M .(2018).GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect.APPLIED SURFACE SCIENCE,441(5),401-407.
MLA	Rozahun, I ,et al."GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect".APPLIED SURFACE SCIENCE 441.5(2018):401-407.