Room Temperature Ferromagnetism in Si-Doped GaN Powders

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	Room Temperature Ferromagnetism in Si-Doped GaN Powders
	Ababakri, R ; Song, B ; Wang, G ; Zhang, ZH ; Wu, R ; Li, J ; Jian, JK
刊名	SCIENCE OF ADVANCED MATERIALS
	2014
卷号	6 期号:2 页码:263
关键词	Ferromagnetism Diluted Magnetic Semiconductors Si-Doped GaN Gallium Vacancy
ISSN号	1947-2935
通讯作者	Jian, JK (reprint author), Xinjiang Univ, Dept Phys, Urumqi 830046, Xinjiang, Peoples R China.
中文摘要	Un-doped and Si-doped GaN powders were prepared by direct nitridation of Ga2O3 under NH3 atmosphere. Energy-dispersive X-ray spectroscopy, X-ray diffraction and X-ray photoemission spectroscopy indicate that Si atoms are successfully incorporated into GaN lattices and substitute for Ga atoms. Scanning electron microscopy, Raman scattering and photoluminescence demonstrate that the Si doping results in the decrease of crystalline sizes and the increase of defects in the samples. The room temperature ferromagnetism is observed in the Ga1-xSixN powders which is enhanced with increasing Si content. It is proposed that the defects, oxygen impurity and Si dopants play important roles to determine the long-range magnetic order in the Si-doped GaN powders.
资助信息	Scientific Research Program of the Higher Education Institution of Xin Jiang [XJEDU 2011111]; National Scientific Foundation of China [51172193, 50902037, 51172055, 11164026, 50902014]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59674]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Ababakri, R,Song, B,Wang, G,et al. Room Temperature Ferromagnetism in Si-Doped GaN Powders[J]. SCIENCE OF ADVANCED MATERIALS,2014,6(2):263.
APA	Ababakri, R.,Song, B.,Wang, G.,Zhang, ZH.,Wu, R.,...&Jian, JK.(2014).Room Temperature Ferromagnetism in Si-Doped GaN Powders.SCIENCE OF ADVANCED MATERIALS,6(2),263.
MLA	Ababakri, R,et al."Room Temperature Ferromagnetism in Si-Doped GaN Powders".SCIENCE OF ADVANCED MATERIALS 6.2(2014):263.