Characterization of Zn-doped GaN grown by metal-organic vapor phase epitaxy

doi:10.1007/s12598-014-0248-9

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	Characterization of Zn-doped GaN grown by metal-organic vapor phase epitaxy
	C. T. Wu,Y. Zhou,Q. Y. Sun,L. Q. Huang,A. L. Li and Z. M. Li
刊名	Rare Metals
	2020
卷号	39 期号:11 页码:1328-1332
ISSN号	1001-0521
DOI	10.1007/s12598-014-0248-9
英文摘要	The point defects and photoluminescence (PL) spectra of gallium nitride (GaN) epilayers with Mg, Zn, and unintentional doping were investigated in this study. The concentration of point defects (Ga vacancy and its related complexes) in the Zn-doped GaN is consistent with that in the Mg-doped GaN, but lower than that in undoped GaN. It is suggested that Zn (Mg) atoms occupy Ga sites and suppress the formation of Ga vacancies. Comparing the blue luminescence (BL) band intensity of GaN:Zn with that of GaN:Mg, a factor of 10 strong PL intensity demonstrates that a moderate incorporation of Zn to GaN is likely to improve the structural quality of GaN. Detailed studies on 2.93 eV BL band for GaN:Zn reveal that the Zn related BL band behaves as a donor-acceptor pairs character. For the acceptor level, isolated Zn(Ga)with the activation energy of 0.386 eV above the valence band is obtained from temperature-dependent PL measurements, whereas the deep donor defect responsible for the 2.93 eV band is deduced to be 164 meV below the conduction band. An O-N-H complex model is suggested to explain the deep donor origin.
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语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/64356]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C. T. Wu,Y. Zhou,Q. Y. Sun,L. Q. Huang,A. L. Li and Z. M. Li. Characterization of Zn-doped GaN grown by metal-organic vapor phase epitaxy[J]. Rare Metals,2020,39(11):1328-1332.
APA	C. T. Wu,Y. Zhou,Q. Y. Sun,L. Q. Huang,A. L. Li and Z. M. Li.(2020).Characterization of Zn-doped GaN grown by metal-organic vapor phase epitaxy.Rare Metals,39(11),1328-1332.
MLA	C. T. Wu,Y. Zhou,Q. Y. Sun,L. Q. Huang,A. L. Li and Z. M. Li."Characterization of Zn-doped GaN grown by metal-organic vapor phase epitaxy".Rare Metals 39.11(2020):1328-1332.