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Self-assembly of single “square”quantum ring in gold-free GaAs nanowires 期刊论文
Nanoscale, 2014, 卷号: 6, 期号: 6, 页码: 3190-3196
Guowei Zha, Xiangjun Shang, Dan Su, Ying Yu, Bin Wei, Li Wang, Mifeng Li, Lijuan Wang,Jianxing Xu, Haiqiao Ni, Yuan Ji, Baoquan Sun and Zhichuan Niu
收藏  |  浏览/下载：58/0  |  提交时间：2014/03/26
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:  Yang T
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X
收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
收藏  |  浏览/下载：40/4  |  提交时间：2011/07/05
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Jin P
收藏  |  浏览/下载：53/4  |  提交时间：2011/07/07
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2011, 卷号: 43, 期号: 4, 页码: 869-873
作者:  Zhou XL;  Li TF
收藏  |  浏览/下载：31/1  |  提交时间：2011/07/05
Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 11, 页码: 113540
Zhou, X.L.; Chen, Y.H.; Ye, X.L.; Xu, Bo; Wang, Z.G.
收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14
High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801
Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：150/30  |  提交时间：2010/04/13

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