Comparison of as-grown and annealed GaN/InGaN:Mg samples

	Comparison of as-grown and annealed GaN/InGaN:Mg samples
	Deng QW ; Wang XL ; Xiao HL ; Wang CM ; Yin HB ; Chen H ; Lin DF ; Jiang LJ ; Feng C ; Li JM ; Wang ZG ; Hou X
刊名	journal of physics d-applied physics
	2011
卷号	44 期号:34 页码:345101
关键词	LIGHT-EMITTING-DIODES VAPOR-PHASE EPITAXY BAND-GAP MG PHOTOLUMINESCENCE INGAN DEPENDENCE STRAIN ENERGY INN
ISSN号	0022-3727
通讯作者	deng, qw (reprint author), chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china, daven@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	knowledge innovation engineering of chinese academy of sciences[yyyj-0701-02]; national nature sciences foundation of china[60890193, 60906006]; state key development program for basic research of china[2006cb604905, 2010cb327503]; chinese academy of sciences[iscas2008t01, iscas2009l01, iscas2009l02]
语种	英语
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22653]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Deng QW,Wang XL,Xiao HL,et al. Comparison of as-grown and annealed GaN/InGaN:Mg samples[J]. journal of physics d-applied physics,2011,44(34):345101.
APA	Deng QW.,Wang XL.,Xiao HL.,Wang CM.,Yin HB.,...&Hou X.(2011).Comparison of as-grown and annealed GaN/InGaN:Mg samples.journal of physics d-applied physics,44(34),345101.
MLA	Deng QW,et al."Comparison of as-grown and annealed GaN/InGaN:Mg samples".journal of physics d-applied physics 44.34(2011):345101.