Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation

	Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
	Li H ; Zhou K ; Pang JB ; Shao YD ; Wang Z ; Zhao YW
刊名	semiconductor science and technology
	2011
卷号	26 期号:7 页码:article no.75016
关键词	UNDOPED GALLIUM ANTIMONIDE SELF-DIFFUSION NATIVE DEFECTS N-TYPE CRYSTALS CATHODOLUMINESCENCE PHOTOLUMINESCENCE SEMICONDUCTORS SPECTROSCOPY LUMINESCENCE
ISSN号	0268-1242
通讯作者	li, h, wuhan univ, dept phys, wuhan 430072, peoples r china. wangz@whu.edu.cn
学科主题	半导体材料
收录类别	SCI
资助信息	natural science foundation of china [10775107]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	defects in as-grown undoped and tellurium-doped gallium antimonide were studied using positron lifetime and coincidence doppler broadening measurements. the grown-in defects in these samples were supposed to be ga vacancy (v-ga)-related defects. more v-ga-related defects were introduced into undoped and lightly te-doped gasb after electron irradiation at the doses of 1.0 x 10(17) cm(-2) and 1.0 x 10(18) cm(-2); however, in the heavily te-doped gasb, electron irradiation led to partial recovery of vga. the role of te content in the defect evolution is also discussed.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20813]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Li H,Zhou K,Pang JB,et al. Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation[J]. semiconductor science and technology,2011,26(7):article no.75016.
APA	Li H,Zhou K,Pang JB,Shao YD,Wang Z,&Zhao YW.(2011).Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation.semiconductor science and technology,26(7),article no.75016.
MLA	Li H,et al."Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation".semiconductor science and technology 26.7(2011):article no.75016.