Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN

	Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
	Hou QF ; Wang XL ; Xiao HL ; Wang CM ; Yang CB ; Yin HB ; Li JM ; Wang ZG
刊名	chinese physics letters
	2011
卷号	28 期号:3 页码:article no.37102
关键词	EPITAXIAL LAYERS PHOTOLUMINESCENCE ABSORPTION CARBON BAND
ISSN号	0256-307x
通讯作者	hou, qf, chinese acad sci, ctr mat sci, inst semicond, pob 912, beijing 100083, peoples r china. qfhou@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	chinese academy of sciences [yyyj-0701-02, iscas2008t01, iscas2009l01, iscas2009l02]; national natural sciences foundation of china [60890193, 60906006]; national basic research program of china [2006cb604905, 2010cb327503]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	yellow and blue luminescence in undoped gan layers with different resistivities are studied by cathodoluminescence. intense yellow and blue luminescence bands are observed in semi-insulating gan, while in n-gan the yellow luminescence and blue luminescence bands are very weak. the stronger yellow and blue luminescences in semi-insulating gan are correlated to the higher edge-type dislocation density. the scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate. it is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-gan with a lower density of edge-type dislocations. an approximately 3.35 ev shoulder next to the near-band-edge peak is observed in n-gan but not in semi-insulating gan. a redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20823]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Hou QF,Wang XL,Xiao HL,et al. Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN[J]. chinese physics letters,2011,28(3):article no.37102.
APA	Hou QF.,Wang XL.,Xiao HL.,Wang CM.,Yang CB.,...&Wang ZG.(2011).Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN.chinese physics letters,28(3),article no.37102.
MLA	Hou QF,et al."Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN".chinese physics letters 28.3(2011):article no.37102.