High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

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	High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy
	Ji HM (Ji Hai-Ming) ; Yang T (Yang Tao) ; Cao YL (Cao Yu-Lian) ; Xu PF (Xu Peng-Fei) ; Gu YX (Gu Yong-Xian) ; Ma ; WQ (Ma Wen-Quan) ; Wang ZG (Wang Zhan-Guo)
刊名	chinese physics letters
	2010
卷号	27 期号:2 页码:art. no. 027801
关键词	THRESHOLD CURRENT ROOM-TEMPERATURE DEPENDENCE PHOTOLUMINESCENCE
通讯作者	yang, t, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail address: tyang@semi.ac.cn
合作状况	其它
英文摘要	we report the molecular beam epitaxy growth of 1.3 mu m inas/gaas quantum-dot (qd) lasers with high characteristic temperature t-0. the active region of the lasers consists of five-layer inas qds with p-type modulation doping. devices with a stripe width of 4 mu m and a cavity length of 1200 mu m are fabricated and tested in the pulsed regime under different temperatures. it is found that t-0 of the qd lasers is as high as 532k in the temperature range from 10 degrees c to 60 degrees c. in addition, the aging test for the lasers under continuous wave operation at 100 degrees c for 72 h shows almost no degradation, indicating the high crystal quality of the devices.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13t15:26:58z no. of bitstreams: 1 high characteristic temperature 1.3 mu m inasgaas quantum-dot lasers grown by molecular beam epitaxy.pdf: 638623 bytes, checksum: 4d6dd5ad199240fa92469e99dc5873a7 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-13t16:03:53z (gmt) no. of bitstreams: 1 high characteristic temperature 1.3 mu m inasgaas quantum-dot lasers grown by molecular beam epitaxy.pdf: 638623 bytes, checksum: 4d6dd5ad199240fa92469e99dc5873a7 (md5); made available in dspace on 2010-04-13t16:03:53z (gmt). no. of bitstreams: 1 high characteristic temperature 1.3 mu m inasgaas quantum-dot lasers grown by molecular beam epitaxy.pdf: 638623 bytes, checksum: 4d6dd5ad199240fa92469e99dc5873a7 (md5) previous issue date: 2010; national high-technology research and development program of china 2006aa03z401; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	national high-technology research and development program of china 2006aa03z401
语种	英语
公开日期	2010-04-13
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11160]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Ji HM ,Yang T ,Cao YL ,et al. High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy[J]. chinese physics letters,2010,27(2):art. no. 027801.
APA	Ji HM .,Yang T .,Cao YL .,Xu PF .,Gu YX .,...&Wang ZG .(2010).High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy.chinese physics letters,27(2),art. no. 027801.
MLA	Ji HM ,et al."High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy".chinese physics letters 27.2(2010):art. no. 027801.