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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283 作者:  Ji L;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：60/5  |  提交时间：2010/03/08 Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells 会议论文 conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004 Xu Y; Zhu XP; Song GF; Cao Q; Guo L; Li YZ; Chen LH 收藏  |  浏览/下载：164/42  |  提交时间：2010/03/29 quantum well intermixing   Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation 会议论文 conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004 Xu Y; Zhu XP; Gan QQ; Song GF; Cao Q; Guo, L; Li YZ; Chen LH 收藏  |  浏览/下载：575/277  |  提交时间：2010/03/29 valence band mixing   High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Ma XY; Cao Q; Wang ST; Guo L; Wang ZM; Wang LM; He GP; Yang YL; Zhang HQ; Zhou XN; Chen LH 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 InGaAsP  strained layer quantum well  laser diode  MOCVD   The study of single mode 650nm AlGaInP quantum well laser diodes for DVD 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Ma XY; Cao Q; Wang ST; Guo L; Wang LM; Yang YL; Zhang HQ; Zhang XY; Chen LH 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 AlGaInP  quantum well  laser diode  MOCVD  DVD