Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
	Xu Y ; Zhu XP ; Gan QQ ; Song GF ; Cao Q ; Guo, L ; Li YZ ; Chen LH
	2005
会议名称	conference on semiconductor and organic optoelectronic materials and devices
会议日期	nov 09-11, 2004
会议地点	beijing, peoples r china
关键词	valence band mixing
页码	5624: 221-225
通讯作者	xu, y, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	usually in the calculation of valence subband structure for iii-v direct bandgap material, axial approximation had been used in the luttinger-kohn model to simplify the computational efforts. in this letter, the valence subband structure for the gainp/algainp strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 luttinger-kohn hamiltonian including strain and spin-orbit splitting effects. the numerical simulation results were presented with help of the finite-difference methods. the calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. the results indicated that there was a strong warping in the gainp valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched gainp/algainp quantum wells.
英文摘要	usually in the calculation of valence subband structure for iii-v direct bandgap material, axial approximation had been used in the luttinger-kohn model to simplify the computational efforts. in this letter, the valence subband structure for the gainp/algainp strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 luttinger-kohn hamiltonian including strain and spin-orbit splitting effects. the numerical simulation results were presented with help of the finite-difference methods. the calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. the results indicated that there was a strong warping in the gainp valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched gainp/algainp quantum wells.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; spie.; chinese opt soc.; china inst commun.; beijing assoc commun & informat.; beijing univ posts & telecommun.; ieee comsoc.; ieee leos.; commun inst china, opt commun tech comm.; opt soc amer.; tsinghua univ.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	其他
会议主办者	spie.; chinese opt soc.; china inst commun.; beijing assoc commun & informat.; beijing univ posts & telecommun.; ieee comsoc.; ieee leos.; commun inst china, opt commun tech comm.; opt soc amer.; tsinghua univ.
会议录	semiconductor and organic optoelectronic materials and devices丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	半导体物理
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-5578-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10134]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu Y,Zhu XP,Gan QQ,et al. Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation[C]. 见:conference on semiconductor and organic optoelectronic materials and devices. beijing, peoples r china. nov 09-11, 2004.