Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature

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	Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature
	Ji L; Jiang DS; Zhao DG; Zhang SM; Yang H; Chen LH; Liu SY; Wang H; Wang H; Yang H
刊名	chinese physics letters
	2008
卷号	25 期号:4 页码:1281-1283
ISSN号	0256-307x
通讯作者	zhang, lq, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: hyang@red.semi.ac.cn
中文摘要	room-temperature operation of cw gan based multi-quantum-well laser diodes (lds) is demonstrated. the ld structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. a 2.5 mu m x 800 mu m ridge waveguide structure is fabricated. the electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. the threshold current and voltage of the ld under cw operation are 110ma and 10.5v, respectively. thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. the full width at half maximum for the parallel and perpendicular far field pattern (ffp) are 12 degrees and 32 degrees, respectively.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6720]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ji L,Jiang DS,Zhao DG,et al. Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature[J]. chinese physics letters,2008,25(4):1281-1283.
APA	Ji L.,Jiang DS.,Zhao DG.,Zhang SM.,Yang H.,...&Cao Q.(2008).Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature.chinese physics letters,25(4),1281-1283.
MLA	Ji L,et al."Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature".chinese physics letters 25.4(2008):1281-1283.