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	Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells
	Xu Y ; Zhu XP ; Song GF ; Cao Q ; Guo L ; Li YZ ; Chen LH
	2005
会议名称	conference on semiconductor and organic optoelectronic materials and devices
会议日期	nov 09-11, 2004
会议地点	beijing, peoples r china
关键词	quantum well intermixing
页码	5624: 91-95
通讯作者	xu, y, chinese acad sci, inst semicond, beijing 100864, peoples r china.
中文摘要	compositional distribution of the quantum well and barrier after quantum well intermixing for gainp/algainp system was theoretically analyzed on the basis of atom diffusion law. with the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 luttinger-kohn hamiltonian, including spin-orbit splitting effects. to get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the luttinger-kohn model to simplify the computational efforts, since there was a strong warping in the gainp valence band. at last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.
英文摘要	compositional distribution of the quantum well and barrier after quantum well intermixing for gainp/algainp system was theoretically analyzed on the basis of atom diffusion law. with the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 luttinger-kohn hamiltonian, including spin-orbit splitting effects. to get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the luttinger-kohn model to simplify the computational efforts, since there was a strong warping in the gainp valence band. at last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; spie.; chinese opt soc.; china inst commun.; beijing assoc commun & informat.; beijing univ posts & telecommun.; ieee comsoc.; ieee leos.; commun inst china, opt commun tech comm.; opt soc amer.; tsinghua univ.; chinese acad sci, inst semicond, beijing 100864, peoples r china
收录类别	其他
会议主办者	spie.; chinese opt soc.; china inst commun.; beijing assoc commun & informat.; beijing univ posts & telecommun.; ieee comsoc.; ieee leos.; commun inst china, opt commun tech comm.; opt soc amer.; tsinghua univ.
会议录	semiconductor and organic optoelectronic materials and devices丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	半导体物理
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-5578-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10132]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu Y,Zhu XP,Song GF,et al. Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells[C]. 见:conference on semiconductor and organic optoelectronic materials and devices. beijing, peoples r china. nov 09-11, 2004.

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