已选(0)清除
条数/页: 排序方式:
|
| The effect of thermal treatment induced performance improvement for Charge Trapping Memory with Al2O3/(HfO2)0.9(Al2O3)0.1/Al2O3 Multilayer Structure 期刊论文 ECS Journal of Solid State Science and Technology, 2018 作者: Hou CZ(侯朝昭); Wu ZH(吴振华); Yin HX(殷华湘) 收藏  |  浏览/下载:54/0  |  提交时间:2019/05/05 |
| Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment 期刊论文 Microelectronics Reliability, 2018 作者: Zhang QZ(张青竹); Yin HX(殷华湘); Han ZS(韩郑生); Luo JJ(罗家俊); Li B(李博) 收藏  |  浏览/下载:20/0  |  提交时间:2019/03/27 |
| Process variation dependence of total ionizing dose effects in bulk nFinFETs 期刊论文 Microelectronics Reliability, 2018 作者: Zheng ZS(郑中山); Huang YB(黄云波); Li B(李博); Luo JJ(罗家俊); Han ZS(韩郑生) 收藏  |  浏览/下载:24/0  |  提交时间:2019/03/28 |
| Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology 期刊论文 ECS Journal of Solid State Science and Technology, 2018 作者: Zhang QZ(张青竹); Yao JX(姚佳欣); Yin HX(殷华湘); Wu ZH(吴振华); Gao JF(高建峰) 收藏  |  浏览/下载:52/0  |  提交时间:2019/05/05 |
| Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate 期刊论文 ECS Journal of Solid State Science and Technology, 2018 作者: Hou CZ(侯朝昭); Wu ZH(吴振华); Yin HX(殷华湘) 收藏  |  浏览/下载:23/0  |  提交时间:2019/05/05 |
| Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node 期刊论文 Journal of the Electron Devices Society, 2018 作者: Gu J(顾杰); Wen Yang; Wu ZH(吴振华); Yin HX(殷华湘); Wang WW(王文武) 收藏  |  浏览/下载:30/0  |  提交时间:2019/05/05 |
| Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018 作者: Yang L(杨玲); Zhang QZ(张青竹); Huang YB(黄云波); Zheng ZS(郑中山); Li B(李博) 收藏  |  浏览/下载:17/0  |  提交时间:2019/03/28 |
| Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory 期刊论文 ECS Journal of Solid State Science and Technology, 2018 作者: Hou CZ(侯朝昭); Yin HX(殷华湘); Wu ZH(吴振华); Yao JX(姚佳欣) 收藏  |  浏览/下载:35/0  |  提交时间:2019/05/05 |
| Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process 期刊论文 IEEE Electron Device Letters, 2018 作者: Zhang QZ(张青竹); Yin HX(殷华湘); Meng LK(孟令款); Yao JX(姚佳欣); Li JJ(李俊杰) 收藏  |  浏览/下载:27/0  |  提交时间:2019/05/05 |
| Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510 作者: Yang, L (Yang, Ling)[ 1,2 ]; Zhang, QZ (Zhang, Qingzhu)[ 1,3 ]; Huang, YB (Huang, Yunbo)[ 1,2 ]; Zheng, ZS (Zheng, Zhongshan)[ 1,2 ]; Li, B (Li, Bo)[ 1,2 ] 收藏  |  浏览/下载:35/0  |  提交时间:2018/09/18
|