The effect of thermal treatment induced performance improvement for Charge Trapping Memory with Al2O3/(HfO2)0.9(Al2O3)0.1/Al2O3 Multilayer Structure

	The effect of thermal treatment induced performance improvement for Charge Trapping Memory with Al2O3/(HfO2)0.9(Al2O3)0.1/Al2O3 Multilayer Structure
	Hou CZ(侯朝昭); Wu ZH(吴振华); Yin HX(殷华湘)
刊名	ECS Journal of Solid State Science and Technology
	2018-11-28
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/19091]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Hou CZ,Wu ZH,Yin HX. The effect of thermal treatment induced performance improvement for Charge Trapping Memory with Al2O3/(HfO2)0.9(Al2O3)0.1/Al2O3 Multilayer Structure[J]. ECS Journal of Solid State Science and Technology,2018.
APA	Hou CZ,Wu ZH,&Yin HX.(2018).The effect of thermal treatment induced performance improvement for Charge Trapping Memory with Al2O3/(HfO2)0.9(Al2O3)0.1/Al2O3 Multilayer Structure.ECS Journal of Solid State Science and Technology.
MLA	Hou CZ,et al."The effect of thermal treatment induced performance improvement for Charge Trapping Memory with Al2O3/(HfO2)0.9(Al2O3)0.1/Al2O3 Multilayer Structure".ECS Journal of Solid State Science and Technology (2018).