| Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory | |
Hou CZ(侯朝昭); Yin HX(殷华湘) ; Wu ZH(吴振华); Yao JX(姚佳欣)
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| 刊名 | ECS Journal of Solid State Science and Technology
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| 2018-05-03 | |
| 文献子类 | 期刊论文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/19086]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Hou CZ,Yin HX,Wu ZH,et al. Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory[J]. ECS Journal of Solid State Science and Technology,2018. |
| APA | Hou CZ,Yin HX,Wu ZH,&Yao JX.(2018).Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory.ECS Journal of Solid State Science and Technology. |
| MLA | Hou CZ,et al."Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory".ECS Journal of Solid State Science and Technology (2018). |
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