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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2018     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 1018-1022 作者:  Wan, Da;  Liu, Xingqiang;  Abliz, Ablat;  Liu, Chuansheng;  Yang, Yanbing 收藏  |  浏览/下载：5/0  |  提交时间：2019/11/21 tungsten (W)-doping  pulsed current-voltage (I-V)  solution processed  Indium zinc oxide (IZO)  thin-film transistors (TFTs)   Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 2844-2849 作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei 收藏  |  浏览/下载：9/0  |  提交时间：2019/11/21 passivation layers (PVLs)  light illumination stress stability  Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)  thin film transistors (TFTs)   Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors with Enhanced Performance 期刊论文 IEEE Transactions on Electron Devices, 2018, 卷号: 65, 期号: 3 作者:  Wan, Da;  Liu, Xingqiang;  Abliz, Ablat;  Liu, Chuansheng;  Yang, Yanbing 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/05 Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors 期刊论文 APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 25 作者:  Li, Guoli;  Abliz, Ablat;  Xu, Lei;  Andre, Nicolas;  Liu, Xingqiang 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/05 Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 3 作者:  Wan, Da;  Liu, Xingqiang;  Abliz, Ablat;  Liu, Chuansheng;  Yang, Yanbing 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05 Indium zinc oxide (IZO)  pulsed current-voltage (I-V)  solution processed  thin-film transistors (TFTs)  tungsten (W)-doping   Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 7 作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/05 Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)  light illumination stress stability  passivation layers (PVLs)  thin film transistors (TFTs)   Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: Vol.65 No.7, 页码: 2844-2849 作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/26 Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)  light illumination stress stability  passivation layers (PVLs)  thin film transistors (TFTs)   Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors 期刊论文 APPLIED PHYSICS LETTERS, 2018, 卷号: Vol.112 No.25 作者:  Li, Guoli;  Abliz, Ablat;  Xu, Lei;  André, Nicolas;  Liu, Xingqiang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/26