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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2017     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1540-1542 作者:  Wan, Da;  Abliz, Ablat;  Su, Meng;  Liu, Chuangsheng;  Jiang, Changzhong 收藏  |  浏览/下载：2/0  |  提交时间：2019/11/21 Amorphous indium-gallium-zinc-oxide (a-InGaZnO)  1/f noise model  thin-film transistors (TFTs)  indium-tin-oxide (ITO) nanowire (NW)  low-frequency noise (LFN)   Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin -Film Transistors 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2017, 卷号: 9, 页码: 10798-10804 作者:  Abliz, Ablat;  Gao, Qingguo;  Wan, Da;  Liu, Xingqiang;  Xu, Lei 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/21 thin-film transistors  reliability  low-frequncy noise  plasma treatment  InGaZnO   Mass Spectral Analysis of the Aged 1,3,5-Trimethylbenzene Secondary Organic Aerosol in the Presence of Ammonium Sulfate Seeds 期刊论文 POLISH JOURNAL OF ENVIRONMENTAL STUDIES, 2017, 卷号: 26, 期号: 4, 页码: 1531-1537 作者:  Huang, Mingqiang;  Xu, Jun;  Cai, Shunyou;  Liu, Xingqiang;  Hui, Changjin 收藏  |  浏览/下载：35/0  |  提交时间：2018/08/16 Ammonium Sulfate  1  Secondary Organic Aerosol  3  Laser Time-of-flight Mass Spectrometer  5-trimethylbenzene  Aging Mechanisms   Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2Transistors 期刊论文 Advanced Functional Materials, 2017, 卷号: 27, 期号: 19 作者:  Yang, Zhenyu;  Liu, Xingqiang;  Zou, Xuming;  Wang, Jingli;  Ma, Chao 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05 Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin -Film Transistors 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2017, 卷号: 9, 期号: 12 作者:  Abliz, Ablat;  Gao, Qingguo;  Wan, Da;  Liu, Xingqiang;  Xu, Lei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05 thin-film transistors  InGaZnO  low-frequncy noise  plasma treatment  reliability   Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2017, 卷号: 27, 期号: 19 作者:  Yang, Zhenyu;  Liu, Xingqiang;  Zou, Xuming;  Wang, Jingli;  Ma, Chao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/05 Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2017, 卷号: 27, 期号: 19 作者:  Yang, Zhenyu;  Liu, Xingqiang;  Zou, Xuming;  Wang, Jingli;  Ma, Chao 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05 Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2Transistors 期刊论文 Advanced Functional Materials, 2017, 卷号: 27, 期号: 19 作者:  Pan, Caofeng;  Xiao, Xiangheng;  Xiong, Jie;  Liao, Lei;  Jiang, Changzhong 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/05 Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors 期刊论文 ACS Applied Materials and Interfaces, 2017, 卷号: 9, 期号: 12 作者:  Li, Xuefei;  Chen, Huipeng;  Xu, Lei;  Liu, Xingqiang;  Wan, Da 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/05 Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 11 作者:  Wan, Da;  Abliz, Ablat;  Su, Meng;  Liu, Chuangsheng;  Jiang, Changzhong 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/05 Amorphous indium-gallium-zinc-oxide (a-InGaZnO)  indium-tin-oxide (ITO) nanowire (NW)  thin-film transistors (TFTs)  low-frequency noise (LFN)  1/f noise model