CORC

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CORC

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Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method 期刊论文
CRYSTALS, 2024, 卷号: 14, 期号: 2, 页码: 11
作者:  Zhang, Yu;  Wen, Xin;  Chen, Nuofu;  Zhang, Fang;  Chen, Jikun
收藏  |  浏览/下载：19/0  |  提交时间：2024/04/02
Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
作者:  Chen QS(陈启生);  Zhu P(朱鹏);  He M(何蒙)
收藏  |  浏览/下载：55/0  |  提交时间：2020/03/11
Microstructural and Mechanical Properties of a NiCoCrAlY Coating Prepared by Laser Cladding on a Compacted Graphite Cast Iron Surface 期刊论文
LASERS IN ENGINEERING, 2017, 卷号: 37, 期号: 4-6, 页码: 273-289
作者:  Liu, H.;  Yu G(虞钢);  He XL(何秀丽);  Yang, H. F.;  Han, Z. T.
收藏  |  浏览/下载：22/0  |  提交时间：2017/11/29
Extraction of Anisotropic Mechanical Properties From Nanoindentation of SiC-6H Single Crystals 期刊论文
JOURNAL OF APPLIED MECHANICS-TRANSACTIONS OF THE ASME, 2016, 卷号: 83, 期号: 9, 页码: 91003
作者:  Datye A;  Li L;  Zhang W;  Wei YJ(魏宇杰);  Gao YF
收藏  |  浏览/下载：25/0  |  提交时间：2016/12/08
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V
收藏  |  浏览/下载：13/0  |  提交时间：2016/01/11
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method 期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
作者:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V
收藏  |  浏览/下载：1199/111  |  提交时间：2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V
收藏  |  浏览/下载：1357/78  |  提交时间：2007/06/15
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
收藏  |  浏览/下载：1237/82  |  提交时间：2007/06/15
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
收藏  |  浏览/下载：1140/44  |  提交时间：2007/12/18
Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide 会议论文
Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing, China
作者:  Zhang ZB(张自兵);  Chen QS(陈启生)
收藏  |  浏览/下载：1489/121  |  提交时间：2007/12/18

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