Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals

CORC > 力学研究所 > 中国科学院力学研究所 > 力学所知识产出(1956-2008)

	Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals
	Lu J; Zhang ZB(张自兵); Chen QS(陈启生)
	2005-10-16
会议名称	3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
卷号	292
期号	2
页码	519-522
通讯作者	陈启生
中文摘要	The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.
收录类别	CPCI-S
会议录	Journal of Crystal Growth
学科主题	力学
语种	英语
ISSN号	0022-0248
WOS记录号	WOS:000239481000077
内容类型	会议论文
源URL	[http://dspace.imech.ac.cn/handle/311007/13927]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Lu J,Zhang ZB,Chen QS. Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals[C]. 见:3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA.