Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method

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	Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method
	Zhang ZB(张自兵); Lu J; Chen QS(陈启生); Prasad V
刊名	Acta Mechanica Sinica
	2006
通讯作者邮箱	qschen@imech.ac.cn
卷号	22 期号:1 页码:40-45
ISSN号	0567-7718
通讯作者	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
中文摘要	A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.
学科主题	力学
类目[WOS]	Engineering, Mechanical ; Mechanics
研究领域[WOS]	Engineering ; Mechanics
关键词[WOS]	SUBLIMATION GROWTH ; SILICON-CARBIDE ; BULK GROWTH
收录类别	SCI ; EI ; CSCD
语种	英语
WOS记录号	WOS:000235970000007
公开日期	2007-06-15 ; 2007-12-05 ; 2009-06-23
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/16474]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Zhang ZB,Lu J,Chen QS,et al. Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method[J]. Acta Mechanica Sinica,2006,22(1):40-45.
APA	张自兵,Lu J,陈启生,&Prasad V.(2006).Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method.Acta Mechanica Sinica,22(1),40-45.
MLA	张自兵,et al."Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method".Acta Mechanica Sinica 22.1(2006):40-45.