Simulations of dislocation density in silicon carbide crystals grown by the PVT-method

doi:10.1016/j.jcrysgro.2019.125380

	Simulations of dislocation density in silicon carbide crystals grown by the PVT-method
	Chen QS(陈启生)1,2,3; Zhu P(朱鹏)2,3; He M(何蒙)2,3
刊名	JOURNAL OF CRYSTAL GROWTH
	2020-02-01
卷号	531 页码:6
关键词	Computer simulation Defects Heat transfer Stresses Growth from vapor Semiconducting silicon compounds
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2019.125380
通讯作者	Chen, Qi-Sheng(qschen@imech.ac.cn)
英文摘要	The Alexander-Haasen (AH) model has been applied to analyze the plastic deformation and dislocation generation during the crystal growth process of 4H-SiC (silicon carbide). Plastic parameters are obtained by fitting the predicted curves to the experimental data on the plastic deformation of alpha-SiC crystals under uniaxial compression. The relationship between the activity energy (Q) and stress exponent (n) is considered when using the AH model. This relationship explicitly represents two deformation mechanisms around the critical temperature. The ratio of the activity energy and stress exponent, Q/n, equals 0.3 eV when the temperature is below the transition temperature, and 1.3 eV when the temperature is above the transition temperature. Then, the model is used to predict the dislocation density and thermal stresses in the crystals. The largest dislocation density is found to occur near the graphite/SiC interface, and the dislocation density gradually decreases with the thickness of the ingot.
分类号	Q3
资助项目	National Natural Science Foundation of China[11772344] ; National Natural Science Foundation of China[11532015]
WOS关键词	SIC SINGLE-CRYSTALS ; PLASTIC BEHAVIOR ; ACTIVATION PARAMETERS ; NUMERICAL-SIMULATION ; SUBLIMATION GROWTH ; DYNAMICS ; GLIDE
WOS研究方向	Crystallography ; Materials Science ; Physics
语种	英语
WOS记录号	WOS:000504205900044
资助机构	National Natural Science Foundation of China
其他责任者	Chen, Qi-Sheng
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/81252]
专题	力学研究所_国家微重力实验室
作者单位	1.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 2.Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China; 3.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Chen QS,Zhu P,He M. Simulations of dislocation density in silicon carbide crystals grown by the PVT-method[J]. JOURNAL OF CRYSTAL GROWTH,2020,531:6.
APA	陈启生,朱鹏,&何蒙.(2020).Simulations of dislocation density in silicon carbide crystals grown by the PVT-method.JOURNAL OF CRYSTAL GROWTH,531,6.
MLA	陈启生,et al."Simulations of dislocation density in silicon carbide crystals grown by the PVT-method".JOURNAL OF CRYSTAL GROWTH 531(2020):6.