Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide

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	Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide
	Zhang ZB(张自兵); Chen QS(陈启生)
	2004-09-05
会议名称	Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing, China
通讯作者	陈启生
中文摘要	The growth process of 2-inch silicon carbide (SiC) single crystals by the physical vapor transport method (or modified Lely method) has been modeled and simulated. The comprehensive process model incorporates the calculations of radio frequency (RF) induction heating, heat and mass transfer and growth kinetics. The transport equations for electromagnetic field, heat transfer, and species transport are solved using a finite volume-based numerical scheme called MASTRAPP (Multizone Adaptive Scheme for Transport and Phase Change Process). Temperature distribution for a 2-inch growth system is calculated, and the effects of induction heating frequency and current on the temperature distribution and growth rate are investigated. The predicted results have been compared with the experimental data.
会议录	Proceedings of the Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics, 2004, pp.512-519
学科主题	力学
内容类型	会议论文
源URL	[http://dspace.imech.ac.cn/handle/311007/13764]
专题	力学研究所_力学所知识产出(1956-2008)
通讯作者	Chen QS(陈启生)
推荐引用方式 GB/T 7714	Zhang ZB,Chen QS. Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide[C]. 见:Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing, China.