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Sulfur vacancy activated field effect transistors based on ReS2 nanosheets 期刊论文
nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 15757-15762
Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He
收藏  |  浏览/下载：14/0  |  提交时间：2016/03/29
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:  Zhang XW;  You JB;  Yin ZG
收藏  |  浏览/下载：71/1  |  提交时间：2010/03/08
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08
Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302
作者:  Jiang DS
收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11
Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 23, 页码: 3595-3597
Tsang MS; Wang JN; Ge WK; Li GH; Fang ZL; Chen Y; Han HX; Li LH; Pan Z
收藏  |  浏览/下载：99/11  |  提交时间：2010/08/12
High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere 期刊论文
physical review b, 1999, 卷号: 59, 期号: 11, 页码: 7500-7506
Pajot B; Clerjaud B; Xu ZJ
收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12
ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING 期刊论文
japanese journal of applied physics part 2-letters, 1995, 卷号: 34, 期号: 4a, 页码: l418-l421
CHOI WJ; LEE S; ZHANG JM; KIM Y; KIM SK; LEE JI; KANG KN; CHO K
收藏  |  浏览/下载：9/0  |  提交时间：2010/11/17

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