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CORC

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Band crossing in isovalent semiconductor alloys with large size mismatch: first-principles calculations of the electronic structure of bi and n incorporated gaas 期刊论文
Physical review b, 2010, 卷号: 82, 期号: 19, 页码: 4
作者:  Deng, Hui-Xiong;  Li, Jingbo;  Li, Shu-Shen;  Peng, Haowei;  Xia, Jian-Bai
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206
Lu SL (Lu, Shulong); Nosho H (Nosho, Hidetaka); Tackeuchi A (Tackeuchi, Atsushi); Bian LF (Bian, Lifeng); Dong JR (Dong, Jianrong); Niu ZC (Niu, Zhichuan)
收藏  |  浏览/下载：175/28  |  提交时间：2010/03/08
ALLOYS  
P-type doping of gainnas quaternary alloys 期刊论文
Physics letters a, 2008, 卷号: 373, 期号: 1, 页码: 165-168
作者:  Shi, Hongliang;  Duan, Yifeng
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Band-gap bowing and p-type doping of (zn, mg, be)o wide-gap semiconductor alloys: a first-principles study 期刊论文
European physical journal b, 2008, 卷号: 66, 期号: 4, 页码: 439-444
作者:  Shi, H. -L.;  Duan, Y.
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
p-type doping of GaInNAs quaternary alloys 期刊论文
physics letters a, 2008, 卷号: 373, 期号: 1, 页码: 165-168
Shi HL; Duan YF
收藏  |  浏览/下载：234/53  |  提交时间：2010/03/08
Influence of n doping on the rashba coefficient, semiconductor-metal transition, and electron effective mass in insb1-xnx nanowires: ten-band k center dot p model 期刊论文
Physical review b, 2007, 卷号: 75, 期号: 20, 页码: 6
作者:  Zhang, X. W.;  Fan, W. J.;  Li, S. S.;  Xia, J. B.
收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12
Different temperature and pressure behavior of band edge and n-cluster emissions in gaas0.973sb0.022n0.005 期刊论文
Physical review b, 2006, 卷号: 74, 期号: 19, 页码: 6
作者:  Wang, W. J.;  Su, F. H.;  Ding, K.;  Li, G. H.;  Yoon, S. F.
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Effect of nonradiative recombination on carrier dynamics in gainnas/gaas quantum wells 期刊论文
Chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2566-2569
作者:  Sun Zheng;  Wang Bao-Rui;  Xu Zhong-Ying;  Sun Bao-Quan;  Ji Yang
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
Nonradiative recombination effect on photoluminescence decay dynamics in gainnas/gaas quantum wells 期刊论文
Applied physics letters, 2006, 卷号: 88, 期号: 1, 页码: 3
作者:  Sun, Z;  Xu, ZY;  Yang, XD;  Sun, BQ;  Ji, Y
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12

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