Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well
	Tsang MS ; Wang JN ; Ge WK ; Li GH ; Fang ZL ; Chen Y ; Han HX ; Li LH ; Pan Z
刊名	applied physics letters
	2001
卷号	78 期号:23 页码:3595-3597
关键词	GAINNAS ALLOYS BAND-STRUCTURE GAAS NITROGEN GAN(X)AS1-X IMPURITIES BEHAVIOR MASS
ISSN号	0003-6951
通讯作者	tsang ms,hong kong univ sci & technol,dept phys,clear water bay,kowloon,hong kong,peoples r china.
中文摘要	photoluminescence from a gan0.015as0.985/gaas quantum well has been measured at 15 k under hydrostatic pressure up to 9 gpa. both the emissions from the ganas well and gaas barrier are observed. the ganas-related peak shows a much weaker pressure dependence compared to that of the gaas band gap. a group of new peaks appear in the spectra when the pressure is beyond 2.5 gpa, which is attributed to the emissions from the n isoelectronic traps in gaas. the pressure dependence of the ganas-related peaks was calculated using the two-level model with the measured pressure coefficients of the gaas band gap and n level as fitting parameters. it is found that the calculated results deviate seriously from the experimental data. an increasing of the emission intensity and the linewidth of the ganas-related peaks was also observed and briefly discussed. (c) 2001 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12216]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tsang MS,Wang JN,Ge WK,et al. Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well[J]. applied physics letters,2001,78(23):3595-3597.
APA	Tsang MS.,Wang JN.,Ge WK.,Li GH.,Fang ZL.,...&Pan Z.(2001).Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well.applied physics letters,78(23),3595-3597.
MLA	Tsang MS,et al."Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well".applied physics letters 78.23(2001):3595-3597.