Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

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	Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
	Yang H; Wang H; Wang H; Wang YT; Yang H; Jiang DS; Zhu JJ; Zhang SM; Zhao DG
刊名	applied physics letters
	2009
卷号	95 期号:4 页码:art. no. 041901
关键词	edge dislocations gallium compounds III-V semiconductors impurities photoluminescence semiconductor doping semiconductor thin films silicon wide band gap semiconductors X-ray diffraction
ISSN号	0003-6951
通讯作者	zhao dg chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. e-mail address: dgzhao@red.semi.ac.cn
中文摘要	a close relationship is found between the blue and yellow luminescence bands in n-type gan films, which are grown without intentional acceptor doping. the intensity ratio of blue luminescence to yellow luminescence (i-bl/i-yl) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. in addition, the i-bl/i-yl ratio decreases with the increase in si doping. it is suggested that the edge dislocation and si impurity play important roles in linking the blue and yellow luminescence.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60836003 60776047national basic research program of china 2007cb936700 the authors acknowledge the support from the national natural science foundation of china (grant nos. 60836003 and 60776047) and the national basic research program of china (grant no. 2007cb936700).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7059]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Wang H,Wang H,et al. Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films[J]. applied physics letters,2009,95(4):art. no. 041901.
APA	Yang H.,Wang H.,Wang H.,Wang YT.,Yang H.,...&Zhao DG.(2009).Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films.applied physics letters,95(4),art. no. 041901.
MLA	Yang H,et al."Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films".applied physics letters 95.4(2009):art. no. 041901.