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InP-based deep-ridge NPN transistor laser 期刊论文
optics letters, 2011, 卷号: 36, 期号: 16, 页码: 3206-3208
Liang S; Kong DH; Zhu HL; Zhao LJ; Pan JQ; Wang W
收藏  |  浏览/下载：21/0  |  提交时间：2011/09/14
GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05
Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 7, 页码: 77301
Wang M; Gu YX; Ji HM; Yang T; Wang ZG
收藏  |  浏览/下载：15/0  |  提交时间：2012/02/06
EPITAXY  MOVPE  
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X
收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05
The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文
solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994
Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/27
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:  Xu B
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09

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